Datasheet Details
| Part number | 2SD1437 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.40 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1437-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1437 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.40 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1437-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1437 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1437 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ;
| Part Number | Description |
|---|---|
| 2SD1430 | NPN Transistor |
| 2SD1431 | NPN Transistor |
| 2SD1432 | NPN Transistor |
| 2SD1433 | NPN Transistor |
| 2SD1436 | NPN Transistor |
| 2SD1439 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |