Inchange Semiconductor 2SD1500
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1500 |
|---|---|
| Datasheet | 2SD1500 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●High DC Current Gain : hFE= 1000(Min) @IC= 10A
●Low Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high current switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1500ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base...