Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min)
High DC Current Gain
: hFE= 5000(Min) @IC= 3A
Low Collector Saturation Voltgae-
: VCE(sat)= 3.0V(Max.)@ IC= 3A
Complement to Type 2SB1251
Minimum Lot-to-Lot variations for robust device
performance and reliable operat
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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1891
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min) ·High DC Current Gain
: hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae-
: VCE(sat)= 3.0V(Max.