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2SD1891 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 3A Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.)@ IC= 3A Complement to Type 2SB1251 Minimum Lot-to-Lot variations for robust device performance and reliable operat

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1891 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.