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2SD2232 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High DC Current Gain : hFE= 3000(Min) @ IC= 5A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 3000(Min) @ IC= 5A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc websit