2SD2232 datasheet by Inchange Semiconductor.
| Part number | 2SD2232 |
|---|---|
| Datasheet | 2SD2232-INCHANGE.pdf |
| File Size | 183.14 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2232 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2222 | NPN Transistor |
| 2SD2241 | NPN Transistor |
| 2SD2250 | Silicon NPN Darlington Power Transistor |
| 2SD2251 | NPN Transistor |
| 2SD2253 | NPN Transistor |
| 2SD2256 | Silicon NPN Darlington Power Transistor |
| 2SD2257 | NPN Transistor |
| 2SD226 | NPN Transistor |
| 2SD2271 | Silicon NPN Darlington Power Transistor |
| 2SD2275 | NPN Transistor |
