Power Transistor
| Part number | 2SD2236 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 249.30 KB |
| Description | Power Transistor |
| Datasheet | 2SD2236_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·plement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i.
| Part Number | Description |
|---|---|
| 2SD2237 | Power Transistor |
| 2SD2027 | Power Transistor |
| 2SD2033 | Silicon NPN Power Transistor |
| 2SD2094 | Power Transistor |
| 2SD2095 | Silicon NPN Power Transistors |
| 2SD2102 | Silicon NPN Power Transistor |
| 2SD2110 | Power Transistor |
| 2SD2112 | Power Transistor |
| 2SD2113 | Power Transistor |
| 2SD2118 | Silicon NPN Power Transistor |
