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2SD2236 - Power Transistor

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) Wide Area of Safe Operation Complement to Type 2SB1477 APPLICATIONS

Designed for driver and general purpose applications.

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 100 V 100 V 5 V 5 A 60 W UNIT n c . i m e IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet4U.