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2SD2237 - Power Transistor

General Description

High DC Current Gain: hFE = 2000(Min)@ IC= 2A Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A Complement to Type 2SB1478 APPLICATIONS

Designed for power linear and switching applications.

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A ·Complement to Type 2SB1478 APPLICATIONS ·Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww s c s .i VALUE 100 V 100 V 5 V 8 A 60 W UNIT n c . i m e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet4U.