Inchange Semiconductor 2SD2236
Power Transistor
| Part No. | 2SD2236 |
|---|---|
| Datasheet | 2SD2236 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.)●Wide Area of Safe Operation
●Complement to Type 2SB1477
APPLICATIONS
●Designed for driver and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 100 V 100 V 5 V 5 A 60 W UNIT n c . i m e IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2236 TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 IC= 50μA; IE=0 IE= 50μA; IC=0 100 V V(BR)CBO Collector-Base Beakdown Voltage 100 V V(BR)EBO Emitter-Base Beakdown Voltage 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A...