Inchange Semiconductor 2SD2237
Power Transistor
| Part No. | 2SD2237 |
|---|---|
| Datasheet | 2SD2237 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain: hFE = 2000(Min)@ IC= 2A●Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A
●Complement to Type 2SB1478
APPLICATIONS
●Designed for power linear and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w ww s c s .i VALUE 100 V 100 V 5 V 8 A 60 W UNIT n c . i m e VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2237 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE=0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC=0 5 V VCE(sat) Collector-Emitter Satur...