Datasheet Details
| Part number | 2SD299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD299-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD299.
| Part number | 2SD299 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD299-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 8.0 A IB Base Current-Continuous PC Collector Power Dissipation @TC=90℃ TJ Junction Temperature 2.5 A 16 W 115 ℃ Tstg Storage Temperature -65~115 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD299 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
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