Inchange Semiconductor 2SD299
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD299 |
|---|---|
| Datasheet | 2SD299 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1500V (Min)●High Switching Speed
●Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 8.0 A IB Base Current-Continuous PC Collector Power Dissipation @TC=90℃ TJ Junction Temperature 2.5 A 16 W 115 ℃ Tstg Storage Temperature -65~115 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD299ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.0 V VBE(sat) Base-Emitter Satu...