Datasheet Details
| Part number | 2SD291 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD291-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD291.
| Part number | 2SD291 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD291-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 18W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current 1 A PC Collector Power Dissipation@TC=25℃ 18 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD291 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
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