| Part number | 2SD365 |
|---|---|
| Datasheet | 2SD365-INCHANGE.pdf |
| File Size | 206.19 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·plement to Type 2SB512 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD362 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |
