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2SD365 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB512 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency p

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Datasheet Details

Part number 2SD365
Manufacturer INCHANGE
File Size 206.19 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD365 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB512 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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