Datasheet Details
| Part number | 2SD386 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.54 KB |
| Description | NPN Transistor |
| Datasheet | 2SD386-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD386 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.54 KB |
| Description | NPN Transistor |
| Datasheet | 2SD386-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.75 W 25 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD386 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD386 | NPN Triple Diffused Planar Type Silicon Transistor | Sanyo Semicon Device |
 |
2SD386 | SILICON POWER TRANSISTOR | SavantIC |
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2SD386A | NPN Triple Diffused Planar Type Silicon Transistor | Sanyo Semicon Device |
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2SD386A | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD381 | NPN Transistor |
| 2SD382 | NPN Transistor |
| 2SD388 | NPN Transistor |
| 2SD389 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |