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2SD386 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applicat

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Datasheet Details

Part number 2SD386
Manufacturer INCHANGE
File Size 208.54 KB
Description NPN Transistor
Datasheet download datasheet 2SD386 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.75 W 25 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD386 isc website：www.iscsemi.
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