Datasheet Details
| Part number | 2SD389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SD389-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD389 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SD389-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD389 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD389A | Si NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SD381 | NPN Transistor |
| 2SD382 | NPN Transistor |
| 2SD386 | NPN Transistor |
| 2SD388 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |