Datasheet Details
| Part number | 2SD581 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet | 2SD581-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD581.
| Part number | 2SD581 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet | 2SD581-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 40~60W audio amplifier power output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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