Datasheet Details
| Part number | 2SD583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SD583-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD583.
| Part number | 2SD583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.65 KB |
| Description | NPN Transistor |
| Datasheet | 2SD583-INCHANGE.pdf |
|
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·High Current Capability ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB Base Current-Continuous 5 A PD Total Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD583 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage CONDITIONS IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;
| Part Number | Description |
|---|---|
| 2SD581 | NPN Transistor |
| 2SD582 | NPN Transistor |
| 2SD504 | NPN Transistor |
| 2SD506 | NPN Transistor |
| 2SD5075 | NPN Transistor |
| 2SD517 | NPN Transistor |
| 2SD529 | NPN Transistor |
| 2SD531 | NPN Transistor |
| 2SD533 | NPN Transistor |
| 2SD534 | NPN Transistor |