2SD605 Description
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 4A;.