| Part number | 2SD605 |
|---|---|
| Datasheet | 2SD605-INCHANGE.pdf |
| File Size | 177.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 4A;.
See all Inchange Semiconductor datasheets
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|---|---|
| 2SD60 | NPN Transistor |
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| 2SD600K | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
| 2SD613 | NPN Transistor |
| 2SD617 | NPN Transistor |
| 2SD627 | NPN Transistor |
| 2SD628 | Silicon NPN Darlington Power Transistor |
| 2SD632 | NPN Transistor |
