Datasheet Details
| Part number | 2SD605 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SD605-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD605 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.21 KB |
| Description | NPN Transistor |
| Datasheet | 2SD605-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 UNIT V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8 A 1 A 80 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD605 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 4A;
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