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2SD600K - NPN Transistor

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Part number 2SD600K
Manufacturer INCHANGE
File Size 210.79 KB
Description NPN Transistor
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Description

High Collector Current-IC= 1.0A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SB631K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitte

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