Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector Current-IC= 1.0A
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
- Good Linearity of hFE
- Low Saturation Voltage
- plement to Type 2SB631K
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier...
