Datasheet Details
| Part number | 2SD608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD608-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD608.
| Part number | 2SD608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD608-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type 2SB628 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 1.5 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
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