2SD601LT1
2SD601LT1 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by WEJ.
Ro HS
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
- plement to S9015LT1
- Collector Current: Ic= 100m A
D- Collector-Emitter Voltage:Vce= 45V
- High Total Power Dissipation:Pc=225m W
T- High Hfe And Good Linearity
ABSOLUTE MAXIMUM RATINGS at Ta=25
.,LCharacteristic
Symbol Rating
Collector-Base Voltage
Vcbo
Collector-Emitter Voltage
Vceo
OEmitter-Base Voltage
Vebo
2.9 1.9 0.95 0.95 0.4
Collector Current
Ic 100
CCollector Dissipation Ta=25
- PD 225
Junction Temperature
Tj 150
ICStorage Temperature
Tstg -55-150
Unit V V V m A m W
1.
2.4 1.3
1 . G AT E 2 .SO U RC E R 3.DRAIE
U nit :m m
ELECTRICAL CHARACTERISTICS at Ta=25
NCharacteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 50
OCollector-Emitter
Breakdown BVceo...
