Full PDF Text Transcription for 2SD602LT1 (Reference)
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RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage...
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LT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage :Vceo= 40V DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit TCollector-Base Voltage Vcbo 75 V .,LCollector-Emitter Voltage Vceo 40 V 2.9 1.9 0.95 0.95 0.