2SD602LT1
2SD602LT1 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by WEJ.
Ro HS
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
- plement to MMBT2907ALT1
- Collector Dissipation: Pc(max)=225m W
- Collector-Emitter Voltage :Vceo= 40V
DABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
TCollector-Base Voltage
Vcbo 75 V
.,LCollector-Emitter Voltage
Vceo
2.9 1.9 0.95 0.95 0.4
Emitter-Base Voltage
Vebo
Collector Current
Ic 600 m A
Collector Dissipation Ta=25
- PD 225 m W
OJunction Temperature
Tj 150
Storage Temperature
Tstg -55-150
CELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
ICCollector-Base Breakdown Voltage BVcbo 75
Collector-Emitter
Breakdown BVceo 40
Voltage#
NEmitter-Base Breakdown Voltage
BVebo 6
Emitter Cutoff Current
Icex
OCollect Cutoff...
