Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min.)
High DC Current Gain-
: hFE= 1000(Min.)@IC= 5A
Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 5A
Complement to Type 2SB638
Minimum Lot-to-Lot variations for robust device
performance and reliable o
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 5A ·Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type 2SB638 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier and high current
switching applications.
2SD628 Datasheet
