Inchange Semiconductor 2SD628
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD628 |
|---|---|
| Datasheet | 2SD628 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min.)●High DC Current Gain- : hFE= 1000(Min.)@IC= 5A
●Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 5A
●Complement to Type 2SB638
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifier and high current switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~+150 ℃ 2SD628 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD628ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-...