Inchange Semiconductor 2SD649
Silicon NPN Power Transistor
| Part No. | 2SD649 |
|---|---|
| Datasheet | 2SD649 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage: VCBO= 1500V (Min)●High Reliability
APPLICATIONS
●Designed for line-operated horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C I Collector Current- Continuous w w s c s i . w 1500 1500 5 3 5 35 V V n c . i m e V A ICP Collector Current-Pulse A PC Collector Power Dissipation @ TC≤90℃ W TJ Junction Temperature 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc Website： INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD649 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 μA hFE DC Current Gain IC= 3A; VCE= 10V tf Fall Time tstg Storage Time w w w.