2SD665 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·plement to Type 2SB645 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Remended for 200W high-fidelity audio frequency amplifier output stage.