Datasheet Details
| Part number | 2SD669A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD669A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD669A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD669A-INCHANGE.pdf |
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·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A 20 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD669A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD669A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD669A | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD669A | NPN Transistor | UTC |
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2SD669AT | NPN Transistor | SeCoS |
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2SD669AXD | SMD Power Transistor | TAITRON |
|
2SD669 | Silicon NPN Transistor | Hitachi Semiconductor |
| Part Number | Description |
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