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2SD669A - NPN Transistor

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Part number 2SD669A
Manufacturer INCHANGE
File Size 212.41 KB
Description NPN Transistor
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Description

High Collector Current-IC= 1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

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