| Part number | 2SD669 |
|---|---|
| Datasheet | 2SD669-INCHANGE.pdf |
| File Size | 205.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Product Specification isc Silicon NPN Power Transistor 2SD669 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD669 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SD669 | NPN Transistor | UTC |
 |
2SD669 | NPN Transistor | SeCoS |
|
2SD669A | Silicon NPN Transistor | Hitachi Semiconductor |
|
2SD669A | NPN Transistor | UTC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD669A | NPN Transistor |
| 2SD663 | NPN Transistor |
| 2SD665 | NPN Transistor |
| 2SD60 | NPN Transistor |
| 2SD600 | NPN Transistor |
| 2SD600K | NPN Transistor |
| 2SD605 | NPN Transistor |
| 2SD608 | NPN Transistor |
| 2SD612 | NPN Transistor |
| 2SD613 | NPN Transistor |
