Inchange Semiconductor 2SD879
The Region From Low Current to High Current.| Part No. | 2SD879 |
|---|---|
| Datasheet | 2SD879 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= 3.0A●Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse）
●Excellent Linearity of hFE in The Region From Low Current to High Current.
APPLICATIONS
●In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VCEX Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse 5.0 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Product Specification 2SD879 isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD879ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=10µA, IE=0 VCEO Collector-Emitt...