Sanyo Electric 2SD879
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SD879 |
|---|---|
| Datasheet | 2SD879 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.● The charge time is approximately 1 second faster than that of germanium transistors.
● Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted.
● Small package and large allowable collector dissipation (TO-92, PC=750mW).
● Large current capacity and highly resistant to breakdown.
● Excellent linearity of hFE in the region from low current to high current. Specifications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 1.3 1.3 0.44 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-92 EIAJ : SC-43 SANYO : NP
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEX VCEO VEBO IC ICP PC...
