Inchange Semiconductor 2SD950
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD950 |
|---|---|
| Datasheet | 2SD950 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1500V (Min)●Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A
●Built-in Damper Diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for line-operated horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 4.5 A 42 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD950 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD950ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 5.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A 5.0...