2SD950
Description
High Breakdown Voltage- : VCBO= 1500V (Min) Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD950
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 201.89 KB