Datasheet Details
| Part number | 2SD956 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SD956-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD956.
| Part number | 2SD956 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.77 KB |
| Description | NPN Transistor |
| Datasheet | 2SD956-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 4.5 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD956 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 200mA;
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