Datasheet Details
| Part number | 2SK1985 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1985 Download (PDF) |
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| Part number | 2SK1985 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.19 KB |
| Description | N-Channel MOSFET |
| Download | 2SK1985 Download (PDF) |
|
|
|
·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK1985 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1985 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA 900 V VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SK1985-01M | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
2SK1985-01MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
 |
2SK1985-01MR | Power MOSFET | VBsemi |
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