Low Collector Saturation Voltage
High DC Current Gain
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio power amplifiers
Relay & solenoid drivers
Motor controls
General purpose power amplifiers
ABSOLUTE MAXIMUM
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2ST501T
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO(SUS) Collector-Emitter Voltage
330
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150
℃
MAX UNIT
Rth j-c
Ther
2ST501T Datasheet
