2ST501T Description
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2ST501T TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA; IC= 0 VCEO(sus) Collector-Emitter Voltage (IB = 0 ) Sustaining IC = 10 mA, ICEO Collector Cut-off Current (IB = 0) VCE = 300 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter...