Datasheet Details
| Part number | 2ST501T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.48 KB |
| Description | NPN Transistor |
| Datasheet | 2ST501T-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2ST501T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.48 KB |
| Description | NPN Transistor |
| Datasheet | 2ST501T-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage ·High DC Current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO(SUS) Collector-Emitter Voltage 330 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2ST501T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA;
IC= 0 VCEO(sus) Collector-Emitter Voltage (IB = 0 ) Sustaining IC = 10 mA, ICEO Collector Cut-off Current (IB = 0) VCE = 300 V ICBO Collector Cutoff Current VCB= 300V;
IE= 0 IEBO Emitter Cutoff Current VEB= 6V;
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