Datasheet Details
| Part number | B679 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 55.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | B679-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification.
| Part number | B679 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 55.01 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | B679-INCHANGE.pdf |
|
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·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature -120 V -5 V -12 A 12 A 100 W 150 ℃ -65~150 ℃ isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB679 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ;
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