B679 Description
·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.
B679 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor .
·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.