B679 Overview
·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.
B679 datasheet by Inchange Semiconductor.
| Part number | B679 |
|---|---|
| Datasheet | B679-INCHANGE.pdf |
| File Size | 55.01 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.
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| Part Number | Description |
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