Inchange Semiconductor BD237
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD237 |
|---|---|
| Datasheet | BD237 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= 0.15A●Complement to Type BD234/236/238
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD233 45 VCBO Collector-Base Voltage BD235 60 V BD237 100 BD233 45 VCEO Collector-Emitter Voltage BD235 60 V BD237 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD233 45 BD235 60 V BD237 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.5 A 25 W 150 ℃ -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction...