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BD241 - NPN Transistor

General Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C Complement to Type BD242/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

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isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 VCBO Collector-Base Voltage V BD241B 90 BD241C 115 BD241 45 VCEO Collector-Emitter Voltage BD241A 60 V BD241B 80 BD241C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.