Inchange Semiconductor BD241
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD241 |
|---|---|
| Datasheet | BD241 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain -hFE = 25(Min)@ IC= 1.0A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C
●Complement to Type BD242/A/B/C
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in general purpose power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 VCBO Collector-Base Voltage V BD241B 90 BD241C 115 BD241 45 VCEO Collector-Emitter Voltage BD241A 60 V BD241B 80 BD241C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon N...