BD241B Description
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B;.
BD241B is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
BD241B | Complementary Silicon Plastic Power Transistors |
STMicroelectronics |
BD241B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD241B | NPN Epitaxial Silicon Transistor | |
| BD241B | POWER TRANSISTORS COMPLEMENTARY SILICON | |
Bourns |
BD241B | NPN SILICON POWER TRANSISTORS |
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B;.