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BD241C - NPN Transistor

Download the BD241C datasheet PDF. This datasheet also covers the BD241 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain -hFE = 25(Min)@ IC= 1.0A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C Complement to Type BD242/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

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Note: The manufacturer provides a single datasheet file (BD241-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C ·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD241 55 BD241A 70 VCBO Collector-Base Voltage V BD241B 90 BD241C 115 BD241 45 VCEO Collector-Emitter Voltage BD241A 60 V BD241B 80 BD241C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.