BD241C Datasheet and Specifications PDF

The BD241C is a Complementary Silicon Plastic Power Transistors.

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Part NumberBD241C Datasheet
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD241C/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications.. .
Part NumberBD241C Datasheet
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications • Complement to BD242/A/B/C respectively TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maxi. 3 0.2 0.2 0.2 0.2 1 25 10 1.2 1.8 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 0.6A VCE = 4V, IC = 3A I.
Part NumberBD241C Datasheet
DescriptionNPN Power Transistors
Manufactureronsemi
Overview Complementary Silicon Plastic Power Transistors BD241C (NPN), BD242B (PNP), BD242C (PNP) Designed for use in general purpose amplifier and switching applications. Features • High Current Gain − Ba.
* High Current Gain
* Bandwidth Product
* Compact TO
*220 AB Package
* Epoxy Meets UL94 V
*0 @ 0.125 in
* These Devices are Pb
*Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector
*Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎ.
Part NumberBD241C Datasheet
DescriptionNPN power transistors
ManufacturerSTMicroelectronics
Overview The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types ar.
* NPN transistors Applications
* Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type.

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