Inchange Semiconductor BD337
NPN Transistor
| Part No. | BD337 |
|---|---|
| Datasheet | BD337 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain●Complement to type BD338
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IBM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 120 V 120 V 6 V 6 A 0.15 A 60 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD337ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...