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BD338 page 2
Page 2

BD338 Description

·High DC Current Gain ·plement to type BD337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD338 TC=25℃ unless otherwise specified...