BD350 Description
·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BD350 TC=25℃ unless otherwise specified SYMBOL PARAMETER...