BD350 - PNP Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in power amplifier and switching circuits.

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BD350 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD350
Manufacturer	Inchange Semiconductor
File Size	178.74 KB
Description	PNP Transistor
Datasheet	BD350 Datasheet

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isc Silicon PNP Power Transistors INCHANGE Semiconductor BD350 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -30 A ICM Collector Current-Peak -50 A IB Base Current-Continuous -7.