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BD355 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -2.0A Excellent Safe Operating Area Complement to Type BD354 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC = -2.
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