BD354 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A Excellent Safe Operating Area Complement to Type BD355

and reliable operation.

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BD354 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD354
Manufacturer	Inchange Semiconductor
File Size	194.77 KB
Description	PNP Transistor
Datasheet	BD354 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD350	PNP Transistor
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Full PDF Text Transcription (Reference)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD354 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A ·Excellent Safe Operating Area ·Complement to Type BD355 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.