BD545B Overview
Key Specifications
Package: TO-218-3
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Description
Collector Current -IC= 15A - Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C - Complement to Type BD546/A/B/C - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications SYMBOL PARAMETER VALUE UNIT BD545 40 BD545A 60 VCBO Collector-Base Voltage V BD545B 80 BD545C 100 BD545 40 VCEO Collector-Emitter Voltage BD545A 60 V BD545B 80 BD545C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 3.5 W 85 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 1.47 ℃/W Rth j-c isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD545/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD545 40 V(BR)CEO Collector-Emitter Breakdown Voltage BD545A BD545B IC= 30mA ;IB=0 60 80 V BD545C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.625A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 1.8 V BD545 VCE= 40V; VBE= 0 ICES Collector Cutoff Current BD545A BD545B VCE= 60V; VBE= 0 VCE= 80V; VBE= 0 0.4 mA BD545C VCE= 100V; VBE= 0 ICEO Collector Cutoff Current BD545/A BD545B/C VCE= 30V; IB= 0 VCE= 60V; IB= 0 0.7 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 60 hFE-2 DC Current Gain IC= 5A; VCE= 4.
