BD609 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·plement to Type BD610 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing plementary or quasi plementary circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BD609 TC=25℃ unless...