BD609 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Complement to Type BD610 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary o

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BD609 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD609
Manufacturer	Inchange Semiconductor
File Size	196.61 KB
Description	NPN Transistor
Datasheet	BD609 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD609 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type BD610 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. .