Inchange Semiconductor BD636
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD636 |
|---|---|
| Datasheet | BD636 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain - : hFE = 40(Min.)@ IC= -25mA●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.)
●Complement to Type BD635
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -...