DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
Complement to Type BD635
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for amplifier and switching application
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isc Silicon PNP Power Transistor
BD636
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Complement to Type BD635 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
BD636 Datasheet
