DC Current Gain-
: hFE= 20(Min)@ IC= 2A
Complement to Type BD720/722/724/726
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in audio output and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
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isc Silicon NPN Power Transistor
BD719/721/723/725
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= 2A ·Complement to Type BD720/722/724/726 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD719
60
BD721
80
VCBO
Collector-Base Voltage
BD723
100
BD725
120
BD719
60
VCEO
Collector-Emitter Voltage
BD721
80
BD723
100
BD725
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
7
IB
Base Current-Continuous
1
PC
Collector Power Dissipation @ TC=25℃
36
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A
BD719 Datasheet
