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BD745C - NPN Transistor

This page provides the datasheet information for the BD745C, a member of the BD745 NPN Transistor family.

Description

Collector Current -IC= 20A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C Complement to Type BD746/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Base Current 7 Collector Power Dissipation PC @ Ta=2
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