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BD937F

Manufacturer: Inchange Semiconductor

BD937F datasheet by Inchange Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BD937F datasheet preview

BD937F Datasheet Details

Part number BD937F
Datasheet BD937F BD933F Datasheet (PDF)
File Size 209.63 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
BD937F page 2

BD937F Overview

hFE= 40(Min)@ IC= 150mA ·plement to Type BD934F/936F/938F/940F/942F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. IB= 0 BD939F BD941F VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff...

BD937F from other manufacturers

View BD937F datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BD937F Silicon Epitaxial Power Transistors NXP
NXP Logo BD937 Silicon Epitaxial Power Transistors NXP
Inchange Semiconductor Logo BD937 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor logo - Manufacturer

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