DC Current Gain -hFE = 1000(Min)@ IC= -3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
Complement to Type BDT63F
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in audio amplifier output stage
Full PDF Text Transcription for BDT62F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BDT62F. For precise diagrams, and layout, please refer to the original PDF.
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62F DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- :...
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ain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Complement to Type BDT63F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junct
BDT62F Datasheet
