BDT62F Overview
·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT62 -60 BDT62A -80 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;.
