BDX67A
Description
High DC Current Gain- : hFE= 1000(Min)@ IC= 10A Low Saturation Voltage Complement to Type BDX66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BDX67A
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 209.33 KB
Datasheets by Manufacturer
- BDX67B — Seme LAB — NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
- BDX62B — Seme LAB — Bipolar PNP Device
- BDX63A — Seme LAB — NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
- BDX64C — Seme LAB — Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
- BDX69 — Seme LAB — NPN DARLINGTON POWER TRANSISTOR
- BDX65B — SavantIC — SILICON POWER TRANSISTOR
- BDX66B — SavantIC — SILICON POWER TRANSISTOR
- BDX62C — Comset Semiconductors — PNP SILICON DARLINGTONS
- BDX63A — Comset Semiconductors — NPN SILICON DARLINGTONS
- BDX63B — Comset Semiconductors — NPN SILICON DARLINGTONS